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DMN3007LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low On-Resistance
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Case: SO-8
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7m ? @ V GS = 10V
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Case Material: Molded Plastic, “Green” Molding Compound.
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? 10m ? @ V GS = 4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
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UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072g (approximate)
SO-8
Top View
S
S
S
G
Top View
Internal Schematic
D
D
D
D
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
± 20
Units
V
V
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Steady
State
T A = 25°C
T A = 70°C
I D
I DM
16
13
64
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
Device mounted on 2 oz. Copper pads on FR-4 PCB, with R θ JA = 50°C
Symbol
P D
R θ JA
T J, T STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
2.
3.
4.
No purposefully added lead.
Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN3007LSS
Document number: DS31460 Rev. 5 - 2
1 of 5
www.diodes.com
April 2010
? Diodes Incorporated
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